RF Transistors - Page 154

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:3000 MHz, 11.7 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3 GHz
Power:
27.78 dBm
Package Type:
Flanged
Power(W):
0.6 W
Gain:
11.7 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 3 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3 GHz
Power:
51.1 to 51.9 dBm
Package Type:
Surface Mount
Power(W):
129 to 155 dBm W
Gain:
13.1 to 13.9 dB
Supply Voltage:
50 V
more info
Description:350 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
55 dBm
Package Type:
Flanged
Power(W):
350 W
more info
Description:15 W, GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info
Description:35-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.5 dBm
Package Type:
Flanged
Power(W):
44.67 W
Supply Voltage:
28 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info
MRFE6S9125NB Image
Description:Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
44.31 dBm
Package Type:
Flanged
Power(W):
26.98 W
Supply Voltage:
28 V
Package:
CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC
more info
Description:190 to 265 MHz, 8 dB VDMOS Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
190 to 265 MHz
Power:
58.13 dBm
Package Type:
Flanged
Power(W):
650.13 W
Gain:
8 dB
Supply Voltage:
34 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
41 to 42 dBm
Package Type:
Flanged
Power(W):
12.59 to 15.85 W
Supply Voltage:
10 V
more info
Description:45 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info

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