RF Transistors - Page 157

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:130 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
130 W
more info
Description:5.0 Watt - 28 Volts, Class C Microwave 2000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
36.99 dBm
Package Type:
2-Hole Flanged
Power(W):
5 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:270 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.31 dBm
Package Type:
Earless Flanged
Power(W):
270 W
Gain:
16.5 to 18.1 dB
Supply Voltage:
48 V
more info
Description:1200 W LDMOS Power Transistor for Avionics Applications
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
960 to 1215 MHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1200 W
Gain:
19 dB
Supply Voltage:
50 V
more info
MRF8S7235N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 768 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
OM--780--2 PLASTIC
more info
Description:4400 to 5000 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.4 to 5 GHz
Power:
39.54 dBm
Package Type:
Flanged
Power(W):
8.99 W
Gain:
12.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN from 8.5 to 10.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 10.1 GHz
Power:
43.3 to 43.8 dBm
Package Type:
Surface Mount
Power(W):
21.4 to 24 W
Gain:
23.3 dB
more info
Description:50 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
50 W
more info
Description:4.0 Watts - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
36.02 dBm
Package Type:
2-Hole Flanged
Power(W):
4 W
Supply Voltage:
20 V
Package:
55BT-1
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 400 MHz
Power:
30 dBm
Package Type:
Flanged
Power(W):
1 W
Gain:
15 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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