RF Transistors - Page 159

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Package Type:
Flanged
Supply Voltage:
3 to 6 V
more info
Description:80 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
80 W
more info
Description:120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
28 V
Package:
SOT1242C
more info
MMRF1317H Image
Description:RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
61.1 dBm
Package Type:
Flanged
Power(W):
1288.25 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:1025 to 1150 MHz, 10.6 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
46.99 to 48.49 dBm
Package Type:
Flanged
Power(W):
70.63 W
Gain:
10.6 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
35 to 36 dBm
Package Type:
Surface Mount
Power(W):
3.16 to 3.98 W
Supply Voltage:
10 V
Package:
IK
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
37.78 dBm
Package Type:
2-Hole Flanged
Power(W):
6 W
Supply Voltage:
28 V
Package:
55LV-1
more info

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