RF Transistors - Page 159

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 900 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
900 MHz
Power:
48.5 to 49.5 dBm
Package Type:
Flanged
Power(W):
70.79 to 89.1 W
Gain:
19 to 21 dB
Supply Voltage:
50 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
50 dBm
Package Type:
2-Hole Flanged
Power(W):
100 W
Supply Voltage:
28 V
Package:
55RT-2
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
A2T27S020GN Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 MHz to 2.7 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
12 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 10 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10 GHz
Power:
33.5 dBm
Package Type:
Die
Power(W):
2.24 W
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
225 to 400 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
28 V
Package:
55JT-2
more info

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