RF Transistors - Page 158

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:3.4 to 3.8 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
43.97 dBm
Package Type:
Surface Mount
Power(W):
24.95 W
Supply Voltage:
28 V
Package:
SOT608B
more info
AFT09MP055GN Image
Description:Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
764 to 941 MHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4 GULL
more info
Description:L-Band RF Power LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
12.1 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:RF Power LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
40 to 50 VDC
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
48.75 dBm
Package Type:
2-Hole Flanged
Power(W):
74.99 W
Supply Voltage:
12.5 V
Package:
M174
more info
Description:700 W High Power RF LDMOS FET from 1.2 to 1.4 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
700 W
Gain:
15.5 to 16 dB
Supply Voltage:
50 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 1805 to 1990 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MMRF1006H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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