RF Transistors - Page 191

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
30.5 to 31.8 dBm
Package Type:
Flanged
Power(W):
1.12 to 1.51 W
Package:
WF
more info
Description:300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Gallium Nitride 28V, 18W RF Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
42.55 dBm
Package Type:
Surface Mount
Power(W):
17.99 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
51.14 dBm
Package Type:
Surface Mount
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
SOT1135A
more info
MRF8S9260HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
CASE 465C--03 NI--880S
more info
Description:3100 to 3500 MHz, 10.4 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
10.4 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
T2
more info
MAGe-102425-300 Image
Description:300 Watt Low Cost GaN Power Transistor in a Plastic Package
Application Industry:
ISM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
0 to 2.5 GHz
Package Type:
Flanged
Gain:
18 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info

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