RF Transistors - Page 191

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:3100 to 3400 MHz, 8.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
8.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IK
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
M174
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
22 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 900 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 to 900 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MRF6V2010NB Image
Description:VHV6 10W TO272-2
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
50 Vdc
Package:
TO--270--2 PLASTIC
more info
Description:GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Package:
IA
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
12.5 V
Package:
M113
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40.64 dBm
Package Type:
Flanged
Power(W):
11.59 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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