RF Transistors - Page 193

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:300 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
54.77 dBm
Package Type:
Ceramic
Power(W):
300 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:250 Watt LDMOS Transistor for RF Energy Applications
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
32 V
Package:
SOT1270-1
more info
A2G22S251-01S Image
Description:AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.2 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:653 to 687 MHz, Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
653 to 687 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
10.2 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
36.5 to 37.5 dBm
Package Type:
Flanged
Power(W):
4.47 to 5.62 W
Supply Voltage:
10 V
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 60 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
300 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
7.4 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:2.3 to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975B
more info
MRF6VP41KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info

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