RF Transistors - Page 188

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 2900 MHz, 12 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
50.41 to 52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Supply Voltage:
50 V
Package:
55KT-1
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:10 to 600 MHz, 45.44 dBm, LDMOS Transistor
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 600 MHz
Power:
45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MRF6VP3450H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:1025 to 1150 MHz, 11.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
40 to 41.49 dBm
Package Type:
Flanged
Power(W):
14.09 W
Gain:
11.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2.025 to 2.285 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.025 to 2.285 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Supply Voltage:
10 V
Package:
IK
more info
Description:12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
40.79 dBm
Package Type:
2-Hole Flanged
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
55LT-1
more info
Description:35-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.5 dBm
Package Type:
Flanged
Power(W):
44.67 W
Supply Voltage:
28 V
more info

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