RF Transistors - Page 188

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1200 to 1400 MHz, 9 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
37.78 to 39.78 dBm
Package Type:
Flanged
Power(W):
9.51 W
Gain:
9 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
42 to 42.5 dBm
Package Type:
Flanged
Power(W):
15.85 to 17.78 W
Package:
IA
more info
Description:50 W, GaN on SiC Transistor from 1000 to 14000 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 14000 MHz
Power:
46.98 dBm
Package Type:
Die
Power(W):
50 W
Supply Voltage:
28 V
more info
Description:70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.5 to 5.9 GHz
Power:
48.81 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52.79 to 54.62 dBm
Package Type:
Surface Mount
Power(W):
289.73 W
Supply Voltage:
45 V
Package:
SOM039
more info
AFV09P350-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:2900 to 3400 MHz, 7.9 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.4 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
7.9 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3 to 3.5 GHz
Power:
51.8 to 52.8 dBm
Package Type:
Flanged
Power(W):
151.36 to 190.55 W
Supply Voltage:
50 V
more info
Description:110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
50.41 to 52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Supply Voltage:
50 V
Package:
55KT-1
more info
Description:400-W, 2900 to 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
56.13 to 57.28 dBm
Package Type:
Flanged
Power(W):
534.56 W
Supply Voltage:
50 V
more info

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