RF Transistors - Page 190

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:53.8 dBm (240 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
53.8 dBm
Package Type:
Surface Mount
Power(W):
239.88 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF1550N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
12.5 V
Package:
CASE 1264-10, STYLE 1 TO-272-6 WRAP PLASTIC
more info
Description:3100 to 3400 MHz, 8.2 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Chip
Power(W):
0 to 0.03 W
Gain:
11 to 13 dB
Supply Voltage:
2 V
more info
Description:12 W, GaN on SiC Transistor from 1000 to 12000 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 12000 MHz
Power:
40.79 dBm
Package Type:
Die
Power(W):
12 W
Supply Voltage:
28 V
more info
Description:3.3 to 3.7 GHz GaN HEMT for S-Band Radar Systems
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3500 to 3700 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
11.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
MRF6V14300HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.98 to 45.98 dBm
Package Type:
Flanged
Power(W):
39.63 W
Supply Voltage:
50 V
Package:
CASE 465A--06, STYLE 1 NI--780S
more info

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