RF Transistors - Page 190

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:E-Series GaN Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:2.1 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.7 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
BLF6G38-50 Image
Description:46.99 dBm (50 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
28 V
Package:
SOT502B
more info
A2V09H525-04N Image
Description:120 W RF Power LDMOS Transistor from 720 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
720 to 960 MHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
120 w
Gain:
18.9 dB
Supply Voltage:
48 V
more info
Description:3100 to 3400 MHz, 10.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
10.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
31.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 W
Supply Voltage:
20 V
Package:
55BT-1
more info
Description:3.3 to 3.8 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121E
more info
MRFX600H Image
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Supply Voltage:
65 V
more info

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