RF Transistors - Page 192

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:20 W LDMOS Power Transistor from 400 MHz to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 MHz to 2.7 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1483-1
more info
MRF8P9210N Image
Description:Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
CASE 2023--02 OM--780--4 PLASTIC
more info
Description:2700 to 2900 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.1 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
M113
more info
Description:48 V GaN HEMT Transistor that operates from DC to 2.2 GHz with 50 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
TO272
more info
Description:LDMOS Doherty MMIC from 3.4 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.9433 W
Gain:
31.1 to 36.1 dB
Supply Voltage:
28 V
more info
MRF6V2010N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
17 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.05 W
Gain:
8.5 to 10 dB
Supply Voltage:
3 V
Package:
LG
more info

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