RF Transistors - Page 195

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:52.04 dBm (160 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
A2T27S020N Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
400 MHz to 2.7 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:1.025 to 1.150 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
26 to 27 dBm
Package Type:
Chip
Power(W):
0.4 to 0.5 W
more info
Description:50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
500 MHz to 1 GHz
Power:
46.99 dBm
Package Type:
2-Hole Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
55AV-2
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:250 W LDMOS Power Transistor for 2.4 GHz RF Energy Applications
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
13.2 to 14.4 dB
Supply Voltage:
32 V
more info
MRF8P29300H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:1030 to 1090 MHz, 16.5 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.04 to 54.52 dBm
Package Type:
Flanged
Power(W):
283.14 W
Gain:
16.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info

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