RF Transistors - Page 195

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2.496 to 2.69 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
AFT09H310-03S Image
Description:Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
NI-1230S-4S
more info
Description:1200 to 1400 MHz, 8.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
8.6 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 8.5 GHz
Power:
37 to 38 dBm
Package Type:
Flanged
Power(W):
5.01 to 6.31 W
Package:
IA
more info
Description:300 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
54.77 dBm
Package Type:
Pallet
Power(W):
300 W
Supply Voltage:
50 V
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 500 to 1000 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 MHz to 1 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MRF1535FN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:960 to 1215 MHz, 11.6 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
48.45 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
11.6 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:GaAs FET from 5.85 to 6.75 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Supply Voltage:
10 V
Package:
IB
more info

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