RF Transistors - Page 196

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:15 Watts, 50 Volts, 4.5mS, 35% 1200 to 1400MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:DC to 2 GHz GaN Transistor in a Plastic Package
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
48 V
Package:
TO272
more info
Description:1000 W LDMOS Power Transistor from 470 to 860 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
470 to 860 MHz
Power:
52.56 dBm (PL Avg) to 60 dBm (P1dB)
Package Type:
2-Hole Flanged, Earless Flanged
Power(W):
180 W (PL Avg), 1000 W (P1dB)
Supply Voltage:
50 V
more info
MRF1535FN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:1200 to 1400 MHz, 8.78 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
55.74 dBm
Package Type:
Flanged
Power(W):
374.97 W
Gain:
8.7 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
29 to 30 dBm
Package Type:
Flanged
Power(W):
0.79 to 1 W
Package:
MH
more info
Description:250 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
53.97 dBm
Package Type:
Ceramic
Power(W):
250 W
Supply Voltage:
50 V
more info
Description:30 W, GaN HEMT from DC to 6 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
28 V
more info
Description:40 dBm (10 W), LDMOS Transistor from 10 to 1400 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1.4 GHz
Power:
30 to 43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
50 V
Package:
SOT1352-1
more info
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info

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