RF Transistors - Page 196

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
28 V
Package:
55AW-1
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 to 18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:1600 W Rugged LDMOS Power Transistor from 1 to 450 MHz
Application Industry:
Broadcast, ISM, Radar, RF Energy, Wireless Infrast...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 450 MHz
Power:
62.04 dBm
Package Type:
Flanged
Power(W):
1599.56 W
Supply Voltage:
50 to 55 V
more info
MMRF1317HS Image
Description:RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
61.1 dBm
Package Type:
Flanged
Power(W):
1288.25 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:5200 to 5900 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
13.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Chip
Power(W):
0.2 to 0.25 W
more info
Description:150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
890 MHz to 1 GHz
Power:
51.76 to 53.22 dBm
Package Type:
Flanged
Power(W):
209.89 W
Supply Voltage:
48 V
Package:
55KT-1
more info
Description:2.7 to 3.3 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.3 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
Description:50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT1244B
more info
AFT05MS006N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 6 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
6 W
Supply Voltage:
7.5 V
Package:
PLD--1.5W
more info

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