RF Transistors - Page 187

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:E-Series GaN Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:25-W, 18.0-GHz, GaN HEMT Die
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 18 GHz
Power:
43.97 dBm
Package Type:
Die
Power(W):
24.95 W
Supply Voltage:
10 V
more info
Description:A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
60 to 60.79 dBm
Package Type:
Surface Mount
Power(W):
1199.5 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MRF6VP121KHS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info
Description:1.03 to 1.09 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
34 to 35 dBm
Package Type:
Flanged
Power(W):
2.51 to 3.16 W
Package:
IA
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
39.29 dBm
Package Type:
Flanged
Power(W):
8.49 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:3-Stage LDMOS Integrated Doherty MMIC from 4.7 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
4.7 to 5 GHz
Power:
40.79 dBm
Package Type:
Surface Mount
Power(W):
12 W
Supply Voltage:
28 V
Package:
LGA
more info
A2T08VD020N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
48 V
Package:
PQFN 8 × 8 PLASTIC
more info

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