RF Transistors - Page 187

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:120 W, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MRF8P9040GN Image
Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1487--05, STYLE 1 TO--270 WB--4 GULL PLASTIC
more info
Description:1025 to 1150 MHz, 10.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
43.01 to 44.55 dBm
Package Type:
Flanged
Power(W):
28.51 W
Gain:
10.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR
Application Industry:
ISM
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
449.78 W
Supply Voltage:
165 V
Package:
T3C
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
8 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:50 dBm (100 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF8S9120N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.19 dBm
Package Type:
Flanged
Power(W):
33.04 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info

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