RF Transistors - Page 194

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:3100 to 3500 MHz, 11 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
25.5 to 27 dBm
Package Type:
Flanged
Power(W):
0.35 to 0.5 W
Package:
WG
more info
Description:2200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
63.42 dBm
Package Type:
Pallet
Power(W):
2200 W
Supply Voltage:
50 V
more info
Description:30 W, DC - 6.0 GHz, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
43 to 44 dBm
Package Type:
Surface Mount
Power(W):
25.12 W
Supply Voltage:
50 V
more info
BLF898 Image
Description:470 to 800 MHz, UHF power LDMOS transistor
Application Industry:
RF Energy, Wireless Infrastructure, Braodcast, ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 800 MHz
Power:
59.54 dBm
Package Type:
Surface Mount
Power(W):
899.5 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MW6S010GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
450 MHz to 1.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
CASE 1265A-03, STYLE 1 TO-270-2 GULL PLASTIC
more info
Description:3100 to 3500 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
38.75 dBm
Package Type:
Flanged
Power(W):
7.5 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 5.85 to 6.75 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Supply Voltage:
10 V
Package:
IK
more info
Description:300 Watts - 40 Volts, 150µs, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.77 to 56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Supply Voltage:
40 V
Package:
55ST-1
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
500 MHz to 1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type