RF Transistors - Page 115

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Comm...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.8 to 2.2 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Gain:
14.5 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
7.8 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:2-Stage LDMOS Doherty MMIC from 1800 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
48.4 dBm
Package Type:
Surface Mount
Power(W):
69.18 W
Supply Voltage:
28 V
more info
MRF8S7170N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 50 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
618 to 803 MHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
OM--780--2L PLASTIC
more info
Description:300 W GaN Asymmetrical Doherty HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
54 W
Gain:
14.1 to 14.2 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:30 to 512 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
30 to 512 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 6.75 GHz
Power:
49.5 to 50.5 dBm
Package Type:
Flanged
Power(W):
89.13 to 112.2 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
24 V
more info
Description:107.15 W, GaN HEMT Transistor from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.3 dBm
Package Type:
Flanged
Power(W):
107.15 W
Gain:
10.6 dB
Supply Voltage:
48 V
more info
Description:20 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
T12
more info

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