RF Transistors - Page 115

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:10 W, 32 V, DC - 6 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
19 dB
Supply Voltage:
32 V
Package:
5 x 5 mm
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
14 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
Supply Voltage:
50 V
more info
MRF8S9260HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
CASE 465C--03 NI--880S
more info
IE27165PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1030 to 1090 MHz, 15.6 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.47 to 55.97 dBm
Package Type:
Flanged
Power(W):
395.37 W
Gain:
15.6 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:107 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 V
more info
Description:135 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
135 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
M113
more info

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