RF Transistors - Page 116

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Comm...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.8 to 2.2 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Gain:
14.5 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 to 18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT1228B
more info
A2T14H450-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1452-1511 MHz, 93 W AVG., 31 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.452 to 1.511 GHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
31 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.5 to 2.69 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:190 to 265 MHz, 8 dB VDMOS Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
190 to 265 MHz
Power:
58.13 dBm
Package Type:
Flanged
Power(W):
650.13 W
Gain:
8 dB
Supply Voltage:
34 V
Package:
Ceramic
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IK
more info
Description:25 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:15 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
41 dBm
Package Type:
Flanged
Power(W):
15 W
more info
Description:100 W, GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
50 dBm
Package Type:
Ceramic
Power(W):
100 W
Supply Voltage:
50 V
more info

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