RF Transistors - Page 116

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1500 W GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm (3dB Compression)
Package Type:
Ceramic
Power(W):
1500 (3dB Compression) W
Gain:
23.3 dB
Supply Voltage:
65 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
225 to 400 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
7.8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40.79 dBm (12 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.79 dBm
Package Type:
Surface Mount
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
SOT975B
more info
AFV10700S Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1030-1090 MHz, 700 W PEAK, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
NI--780S--4L
more info
Description:GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
46.02 to 53.4 dBm
Package Type:
Flanged
Power(W):
40 to 219 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
55 V
Package:
RF12001DHKR3
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 to 46.43 dBm
Package Type:
Flanged
Power(W):
43.95 W
Gain:
16.4 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 7.2 GHz
Application Industry:
SATCOM, Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 7.2 GHz
Power:
41.5 to 43 dBm
Package Type:
Surface Mount
Power(W):
14.13 to 19.95 W
Gain:
11 to 13 dB
Supply Voltage:
24 V
more info
Description:350 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
more info
Description:20 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:5.0 Watts, 12.5 Volts, Class C UHF Applications
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
DC to 512 MHz
Power:
36.99 dBm
Package Type:
Screw Mount, Flanged
Power(W):
5 W
Supply Voltage:
12.5 V
Package:
M123
more info

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