RF Transistors - Page 113

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:10 W CW/Pulsed GaN-on-SiC HEMT from DC to 6 GHz
Application Industry:
Aerospace & Defence, Test & Measurement, Military,...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
17 dB
Supply Voltage:
28 V
more info
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
32 V
Package:
SOT502A
more info
MRF6V2300NB Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 900 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
20.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:4400 to 5000 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.4 to 5 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN from 8.5 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 9.5 GHz
Power:
53.71 to 54.31 dBm
Package Type:
Surface Mount
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:104 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
50.17 dBm
Package Type:
Die
Power(W):
103.99 W
Supply Voltage:
48 V
more info
Description:40 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:500 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.98 dBm
Package Type:
Ceramic
Power(W):
500 W
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type