RF Transistors - Page 113

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:55 Watt, GaN Power Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
16 dB
Supply Voltage:
28 V
more info
Description:60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.3 to 3.6 GHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
50 V
more info
Description:700 W LDMOS Transistor for Avionics Applications
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
58.45 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
700 W
Gain:
20 dB
Supply Voltage:
50 V
more info
MMRF1024HS Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
IR08330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 870 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
21 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:2700 to 2900 MHz, 11.4 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
53.98 to 55.98 dBm
Package Type:
Flanged
Power(W):
396.28 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 6.75 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
24 V
more info
Description:6 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Supply Voltage:
28 V
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:750 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
58.75 dBm
Package Type:
Ceramic
Power(W):
750 W
Supply Voltage:
50 V
more info

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