RF Transistors - Page 114

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:100W, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:500 W GaN HEMT from 0.5 to 1.8 GHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.8 GHz
Power:
56.25 to 57.24 dBm
Package Type:
Flanged
Power(W):
529.66 W
Supply Voltage:
50 V
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1400 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.4 to 1.5 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MRF8S9202NR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
32 W
Gain:
15.3 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:2200 to 2260 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
Description:145 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
51.61 dBm
Package Type:
Die
Power(W):
144.88 W
Supply Voltage:
48 V
more info
Description:130 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
130 W
more info
Description:30 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
44.77 dBm
Package Type:
Pallet
Power(W):
30 W
Supply Voltage:
50 V
more info

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