RF Transistors - Page 114

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:15 W GaN RF Transistor from 0.03 to 1.215 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.215 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
12 to 32 V
Package:
5 x 6 mm
more info
Description:45 Watt GaN on Silicon RF Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
46.53 dBm (p3dB)
Package Type:
Surface Mount
Power(W):
44.98 W (p3dB)
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
A3G26H501W17S Image
Description:56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC, Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.69 GHz
Power:
57 dBm (P3dB)
Package Type:
Flanged
Power(W):
500 W ( P3dB)
Gain:
12.7 to 15.7 dB
Supply Voltage:
48 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:5200 to 5900 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
31.76 dBm
Package Type:
Flanged
Power(W):
1.5 W
Gain:
15.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.9 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.9 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:25.7 W, GaN HEMT Transistor from 5 to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5 to 6 GHz
Power:
44.1 dBm
Package Type:
Flanged
Power(W):
25.7 W
Gain:
8.8 dB
Supply Voltage:
28 V
more info
Description:10 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
34.77 dBm
Package Type:
Through Hole
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
TO-39
more info

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