RF Transistors - Page 142

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:44.77 dBm (30 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
32 V
Package:
SOT1135A
more info
AFV09P350-04GN Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 3.7 to 4.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.7 to 4.2 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast, Commercial
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
12 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
52.86 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Package Type:
Chip
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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