RF Transistors - Page 142

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
58.45 to 58.75 dBm
Package Type:
Surface Mount
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
AFT23H160-25S Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 32 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--880XS--4L4S
more info
Description:1200 to 1400 MHz, 10.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.05 to 49.02 dBm
Package Type:
Flanged
Power(W):
79.8 W
Gain:
10.6 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IB
more info
Description:150 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
150 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.4 GHz
Package Type:
Through Hole
Supply Voltage:
6 V
Package:
TO-72
more info
Description:120-W, 2300 to 2700-MHz, GaN HEMT for WiMAX and LTE
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.3 to 2.7 GHz
Power:
51.13 dBm
Package Type:
Flanged
Power(W):
129.72 W
Supply Voltage:
50 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
AFT05MS031GN Image
Description:Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 520 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:3100 to 3500 MHz, 9.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
9.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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