RF Transistors - Page 143

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description:2 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 120 MHz
Power:
49.54 dBm
Package Type:
Die
Power(W):
89.95 W
Supply Voltage:
150 V
Package:
TO-247CS
more info
Description:15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.4 to 2.7 GHz
Power:
41.9 dBm
Package Type:
Surface Mount
Power(W):
15.49 W
Supply Voltage:
50 V
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
32 V
Package:
SOT502B
more info
MRFE6VP8600H Image
Description:LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
14.3 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
37.5 to 38.5 dBm
Package Type:
Flanged
Power(W):
5.62 to 7.08 W
Package:
IB
more info
Description:200 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:250 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
53.97 dBm
Package Type:
Ceramic
Power(W):
250 W
Supply Voltage:
50 V
more info

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