RF Transistors - Page 160

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:350 W High Power RF LDMOS Transistor from 470 to 860 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
470 to 860 MHz
Power:
55.44 dBm
Package Type:
2-Hole Flanged, Earless Flanged
Power(W):
350 W
Gain:
17.26 to 19.8 dB
Supply Voltage:
50 V
Package:
H-36248-4, H-37248-4
more info
Description:50.79 dBm (120 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
50.7 dBm
Package Type:
Surface Mount
Power(W):
117.49 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRFE6P3300H Image
Description:Lateral N-Channel RF Power MOSFET, 860 MHz, 300 W, 32 V
Application Industry:
ISM, Broadcast, Wireless Infrastructure, Commercia...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
CASE 375G-04, STYLE 1 NI-860C3
more info
Description:1030 to 1090 MHz, 16.6 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.4 to 58.9 dBm
Package Type:
Flanged
Power(W):
776.25 W
Gain:
16.6 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN from 8.5 to 10.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 10.1 GHz
Power:
43.3 to 43.8 dBm
Package Type:
Surface Mount
Power(W):
21.4 to 24 W
Gain:
23.3 dB
more info
Description:135 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
135 W
more info
Description:120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
8.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
52.86 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
MRF6V10010N Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.4 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
50 V
Package:
CASE 466--03, STYLE 1 PLD--1.5 PLASTIC
more info

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