RF Transistors - Page 161

2357 RF Transistors from 26 Manufacturers meet your specification.
IGN1313S3600 Image
Description:3.2 kW, GaN RF Transistor from DC to 1.3 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
65.05 dBm
Package Type:
2-Hole Flanged
Power(W):
3.2 kW
Supply Voltage:
100 V
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
30.5 to 31.5 dBm
Package Type:
Chip
Power(W):
1.12 to 1.41 W
more info
Description:2 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-78029
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130.02 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:250 W LDMOS Power Transistor from 2400 to 2500 MHz
Application Industry:
RF Energy, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
13 to 15 dB
Supply Voltage:
32 V
more info
MMRF1005H Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.62 to 53.62 dBm
Package Type:
Flanged
Power(W):
230.14 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:100 MHz to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 MHz to 6 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Package Type:
Ceramic
Power(W):
0.22 to 0.28 W
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info

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