RF Transistors - Page 163

2360 RF Transistors from 26 Manufacturers meet your specification.
A2I25D025GN Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
35.05 dBm
Package Type:
Flanged
Power(W):
3.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--17 PLASTIC
more info
Description:2.856 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
11.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.2 to 1.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.4 to 54.3 dBm
Package Type:
Flanged
Power(W):
218.78 to 269.15 W
Supply Voltage:
50 V
more info
Description:90 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Package Type:
Through Hole
Supply Voltage:
15 V
Package:
TO-39
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
8.75 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:550 W LDMOS Power Transistor from 2110 to 2180 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2180 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
93 W
Gain:
16.2 dB
Supply Voltage:
30 V
Package:
6 leaded flange
more info
MRFX035H Image
Description:35 W CW LDMOS Power Transistor from 1.8 to 512 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure,...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 500 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
35 W
Supply Voltage:
65 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info

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