RF Transistors - Page 163

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF13750HS Image
Description:RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
58.13 to 58.75 dBm
Package Type:
Flanged
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
IGN1214M3200 Image
Description:1.5 kW, GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 kW
Supply Voltage:
75 V
more info
Description:GaAs FET from 900 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
900 MHz
Power:
43 to 44.5 dBm
Package Type:
Flanged
Power(W):
19.95 to 28.18 W
Package:
IL
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1500 MHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
7 W
more info
Description:400 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
56.02 dBm
Package Type:
Ceramic
Power(W):
400 W
Supply Voltage:
50 V
more info
Description:250 Watts GaN on SiC HEMT from 2490 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Package Type:
Earless Flanged
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
BLL6H1214LS-500 Image
Description:56.99 dBm (500 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MHTG1200HS Image
Description:300 W RF Power GaN Transistor for Cooking Applications
Application Industry:
Commercial
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Package Type:
Surface Mount
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Gain:
10 to 11.5 dB
Supply Voltage:
24 V
more info

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