RF Transistors - Page 162

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
53.42 dBm
Package Type:
2-Hole Flanged
Power(W):
219.79 W
Supply Voltage:
28 V
Package:
M174
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
10 dB
Supply Voltage:
35 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502B
more info
A2T09VD250N Image
Description:Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Supply Voltage:
48 V
Package:
TO--270WB--6A PLASTIC
more info
Description:50 W GaN-on-SiC Power Transistor from 9 to 10 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
10 to 12 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:40 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
51.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M164
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
549.54 W
Gain:
7.4 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:550 W LDMOS Power Transistor from 2110 to 2180 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2180 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
93 W
Gain:
16.2 dB
Supply Voltage:
30 V
Package:
6 leaded flange
more info

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