RF Transistors - Page 164

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:110 Watts, 40 Volts, 200µs, 10% Radar 1480 to 1650 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.48 to 1.65 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
40 V
Package:
55AW-1
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
9.5 to 10 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:70 W LDMOS Power Transistor from 10 to 1500 MHz
Application Industry:
ISM, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 1500 MHz
Power:
48.45 dBm
Package Type:
Surface Mount
Power(W):
69.98 W
Supply Voltage:
32 V
more info
MMRF1320N Image
Description:WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
TO--270WBG--4 PLASTIC
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.8 to 56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Gain:
19.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.1 GHz
Power:
44 to 46 dBm
Package Type:
Flanged
Power(W):
25.12 to 39.81 W
Gain:
13 to 15 dB
Supply Voltage:
50 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
55AW-1
more info
Description:130 W GaN HEMT from 8.4 to 9.6 GHz for X-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.4 to 9.6 GHz
Power:
51.85 to 52.65 dBm
Package Type:
4-Hole Flanged
Power(W):
153 to 184 W (Website says 130 W, datasheet says 1...
Gain:
7.8 to 8.7 dB (Power), 11.8 to 13.8 dB (Linear)
Supply Voltage:
40 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type