RF Transistors - Page 165

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:50 dBm (100 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF6V12500GS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780GS--2L
more info
Description:1025 to 1150 MHz, 10.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
43.01 to 44.55 dBm
Package Type:
Flanged
Power(W):
28.51 W
Gain:
10.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:60 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info
Description:180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52.55 dBm
Package Type:
Die
Power(W):
179.89 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Thermally-Enhanced High Power RF GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.77 dBm (P3dB)
Package Type:
Flanged
Power(W):
300 W (P3dB)
Gain:
16 to 18 dB
Supply Voltage:
48 V
more info
Description:53.42 dBm (220 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
53.4 dBm
Package Type:
Surface Mount
Power(W):
218.78 W
Supply Voltage:
28 V
Package:
SOT502B
more info
MRF8S9200N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:1250 W GaN Power Transistor from 430 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
430 to 450 MHz
Power:
60.97 dBm
Package Type:
2-Hole Flanged
Power(W):
1250 W
Gain:
17.5 to 20 dB
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type