RF Transistors - Page 165

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:49.54 dBm (90 W), LDMOS Transistor from 3400 to 3600 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
SOT1121B
more info
MMRF1008HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:4400 to 5000 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.4 to 5 GHz
Power:
39.54 dBm
Package Type:
Flanged
Power(W):
8.99 W
Gain:
12.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info
Description:3 Watt - 28 Volts, Class C Microwave 2000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 2 GHz
Power:
34.77 dBm
Package Type:
2-Hole Flanged
Power(W):
3 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:400 W, 3600 to 3800 MHz GaN MMIC HEMT for Cellular Power Amplifier Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.6 to 3.8 GHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
48 V
more info
Description:30 W LDMOS Power Transistor from 400 to 860 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 860 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 Watt
Gain:
18.5 to 20.2 dB
Package:
plastic
more info
MRF8P9040N Image
Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
more info
Description:2200 to 2260 MHz, 10 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
41.76 to 44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
10 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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