RF Transistors - Page 185

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2856 MHz, 10.4 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
38.75 dBm
Package Type:
Flanged
Power(W):
7.5 W
Gain:
10.5 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
45.8 dBm
Package Type:
Flanged
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.2 GHz
Package Type:
Through Hole
Gain:
12 to 12.4 dB
Supply Voltage:
6 V
Package:
TO-72
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.02 dBm
Package Type:
Surface Mount
Power(W):
4 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
4mm PQFN-24LD
more info
Description:2.5 to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MRFE6VP100HS Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780S--4
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN from 9 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9 to 10 GHz
Power:
53.71 to 54.31 dBm
Package Type:
Surface Mount
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:125 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
50.96 dBm
Package Type:
Ceramic
Power(W):
125 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
8.4 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info

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