RF Transistors - Page 185

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:870 to 990 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.96 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.96 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:250 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
53.97 dBm
Package Type:
Ceramic
Power(W):
250 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.88 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
28 V
Package:
SOT539B
more info
MRF8P8300H Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info
Description:175000 to 200000 MHz, 15.43 dB MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 to 200 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
14.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
150 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
8 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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