RF Transistors - Page 182

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 to 55.91 dBm
Package Type:
Flanged
Power(W):
389.94 W
Gain:
17.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 4 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
4 GHz
Package Type:
Surface Mount
Gain:
14 to 15.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
12.5 V
Package:
M113
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.2 to 2.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
8 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:LDMOS 1-Stage Integrated Doherty MMIC Transistor from 728 to 821 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
728 to 821 MHz
Power:
36 to 37 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
3.98 to 5.01 W
Supply Voltage:
28 V
more info
AFT09MS007N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
38.45 dBm
Package Type:
Surface Mount
Power(W):
7 W
Supply Voltage:
7.5 V
Package:
PLD--1.5W
more info
Description:L-Band Radar Transistor from 1.03 to 1.09 GHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
0 to 50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Package Type:
Flanged
Supply Voltage:
3 to 6 V
more info
Description:50 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
46.98 dBm
Package Type:
Pallet
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
3 to 200 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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