RF Transistors - Page 182

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:150 W GaN-on-SiC Power Transistor from 3.3 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3300 to 3800 MHz
Power:
51.76 dBm
Package Type:
2-Hole Flanged
Power(W):
150 W
Gain:
7.5 to 13 dB
Supply Voltage:
28 V
Package:
Epoxy-sealed ceramic lid
more info
Description:GaN on SiC, GaN HEMT from 10.7 to 11.7 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10.7 to 11.7 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Gain:
9 to 10 dB
Supply Voltage:
24 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:60 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:100 W GaN HEMT from DC to 3.5 GHz
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50 dBm (PL1dB)
Package Type:
Flanged
Power(W):
100 W (PL1dB)
Supply Voltage:
50 V
Package:
Thermally Enhanced
more info
AFV141KGS Image
Description:BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230GS--4L
more info
Description:960 MHz to 1.25 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.25 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
13.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 1.96 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.96 GHz
Power:
44.5 to 45.5 dBm
Package Type:
Flanged
Power(W):
28.18 to 35.48 W
Package:
IP
more info
Description:500 Watts, 50 Volts, 450 us, 35% 960 - 1215 MHz Broad Band Data Link
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 to 57.4 dBm
Package Type:
Flanged
Power(W):
549.54 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
AC-780B-2/AC-780S-2
more info

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