RF Transistors - Page 186

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
53.52 to 61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539A
more info
A2T14H450-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1452-1511 MHz, 93 W AVG., 31 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.452 to 1.511 GHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
31 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:1030 to 1090 MHz, 11.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
11.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
441.5 dBm
Package Type:
Flanged
Power(W):
10 to 14.13 W
Package:
IB
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:45 Watt GaN on Silicon RF Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
46.53 dBm (p3dB)
Package Type:
Surface Mount
Power(W):
44.98 W (p3dB)
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
52.86 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
MRF1K50N Image
Description:Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 500 MHz
Power:
61.53 dBm
Package Type:
Flanged
Power(W):
1422.33 W
Supply Voltage:
50 V
Package:
OM--1230--4L PLASTIC
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.85 to 6.75 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Supply Voltage:
10 V
Package:
IB
more info

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