RF Transistors - Page 181

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
31.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 W
Supply Voltage:
20 V
Package:
55BT-1
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1.6 to 1.64 GHz
Power:
37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
7.4 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:600 W LDMOS Power Transistor from 2110 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2170 MHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
110 W
Supply Voltage:
30 V
Package:
6 leaded flange
more info
MHT1004N Image
Description:RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.45 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:3100 to 3500 MHz, 11 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IB
more info
Description:RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
118 to 136 MHz
Power:
43.01 dBm
Package Type:
Screw Mount, Flanged
Power(W):
20 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
14 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:55.44 dBm (350 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 600 MHz
Power:
55.44 dBm
Package Type:
Surface Mount
Power(W):
349.95 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
A3G22H400-04S Image
Description:1800 to 2200 MHz, 79 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
48.97 dBm
Package Type:
Flanged
Power(W):
79 W
Supply Voltage:
48 Vdc
more info

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