RF Transistors - Page 181

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
Screw Mount, Flanged
Power(W):
29.99 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:60-W, 2700 to 3500-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
48.7 dBm
Package Type:
Surface Mount
Power(W):
74.13 W
Supply Voltage:
50 V
more info
Description:430 W LDMOS Doherty Power Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2496 to 2690 MHz
Power:
56.33 dBm
Package Type:
Flanged
Power(W):
429.54 W
Supply Voltage:
28 V
Package:
Air Cavity Plastic Earless Flanged Package 6 Leads
more info
MRF8S9202GN Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2267--01 OM--780--2 GULL PLASTIC
more info
Description:1030 to 1190 MHz, 9 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.41 to 61.91 dBm
Package Type:
Flanged
Power(W):
1552.39 W
Gain:
9 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
17 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.05 W
Gain:
8.5 to 10 dB
Supply Voltage:
2 V
more info
Description:55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
28 V
Package:
55AW-1
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
35.56 dBm
Package Type:
Flanged
Power(W):
3.6 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Supply Voltage:
28 V
Package:
SOT539A
more info
MRF1570NT1 Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
CASE 1366-05, STYLE 1 TO-272-8 WRAP PLASTIC
more info

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