RF Transistors - Page 183

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:49.03 dBm (80 W), LDMOS Transistor from 1800 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1223-2
more info
MRF6V3090N Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 to 2.9 GHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from 3.5 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.5 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:15 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
51.85 to 52.86 dBm
Package Type:
Surface Mount
Power(W):
193.2 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MMRF1310HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Application Industry:
Aerospace & Defence, Radar, Broadcast, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
NI--780S--4L
more info
Description:450 MHz, 9.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
450 MHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
9.5 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
37.5 to 38.5 dBm
Package Type:
Flanged
Power(W):
5.62 to 7.08 W
Package:
IK
more info

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