RF Transistors - Page 184

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:650 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
58.12 dBm
Package Type:
Ceramic
Power(W):
650 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
14 to 17 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40 dBm (10 W), LDMOS Transistor from 3400 to 3600 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975C
more info
A2T09VD300N Image
Description:Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
48.98 dBm
Package Type:
Flanged
Power(W):
79.07 W
Supply Voltage:
48 V
Package:
TO--270WB--6A PLASTIC
more info
Description:50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.9 to 9.4 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
80 W
Gain:
10 dB
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Broadcast, Communication, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
46 to 47 dBm
Package Type:
Flanged
Power(W):
39.81 to 50.12 W
Gain:
7 to 8 dB
Supply Voltage:
24 V
more info
Description:5 Watts - 28 Volts, Class C Microwave 3000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
36.99 dBm
Package Type:
2-Hole Flanged
Power(W):
5 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:45-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
28 V
more info
Description:A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
53.52 to 61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT1248C
more info
MMRF1020-04GN Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info

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