RF Transistors - Page 184

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
43.01 dBm
Package Type:
2-Hole Flanged
Power(W):
20 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info
Description:Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.98 dBm
Package Type:
Earless Flanged
Power(W):
50 W
Gain:
14.2 to 14.6 dB
Supply Voltage:
28 V
more info
Description:1000 W LDMOS Power Transistor from 470 to 860 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
470 to 860 MHz
Power:
52.56 dBm (PL Avg) to 60 dBm (P1dB)
Package Type:
2-Hole Flanged, Earless Flanged
Power(W):
180 W (PL Avg), 1000 W (P1dB)
Supply Voltage:
50 V
more info
MMRF1317H Image
Description:RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
61.1 dBm
Package Type:
Flanged
Power(W):
1288.25 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:100 to 1000 MHz, 12 dB GaN Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
100 MHz to 1 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
12.5 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
17 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.05 W
Gain:
8.5 to 10 dB
Supply Voltage:
2 V
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 120 MHz
Power:
49.54 dBm
Package Type:
Die
Power(W):
89.95 W
Supply Voltage:
150 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
9 dB
Supply Voltage:
45 V
Package:
Flange Ceramic
more info
Description:10 to 600 MHz, Power LDMOS transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1204-2
more info
MMRF1310HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Application Industry:
Aerospace & Defence, Radar, Broadcast, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
NI--780S--4L
more info

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