RF Transistors - Page 197

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 3100 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13.5 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
29 to 30 dBm
Package Type:
Chip
Power(W):
0.79 to 1 W
more info
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Avio...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
57.78 to 57.78 dBm
Package Type:
Die
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
50 V
Package:
SOT467C
more info
MRFE6S9160HS Image
Description:Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
28 V
Package:
CASE 465A-06, STYLE 1 NI-780S
more info
Description:30 to 512 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 512 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 2.7 GHz
Power:
43 dBm
Package Type:
Surface Mount
Power(W):
19.95 W
Supply Voltage:
50 V
more info
Description:220 Watts - 50 Volts, 100ms, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.31 dBm
Package Type:
Flanged
Power(W):
269.77 W
Supply Voltage:
50 V
Package:
55ST-1
more info
Description:Si Based TMOS Transistor
Application Industry:
Broadcast, Aerospace & Defence, Radar, ISM, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info

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