RF Transistors - Page 197

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:200 W GaN Power Transistor from 2.7 to 2.9 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2700 to 2900 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
200 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 3.7 to 4.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.7 to 4.2 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IK
more info
Description:1200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
Supply Voltage:
50 V
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info
Description:DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT1228A
more info
MRF8S9220HR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Supply Voltage:
28 V
Package:
CASE 465-06, STYLE 1 NI-780
more info
Description:3100 to 3500 MHz, 10.4 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
10.4 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.3 to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.3 to 3.7 GHz
Power:
42.5 dBm
Package Type:
Surface Mount
Power(W):
17.78 W
Supply Voltage:
50 V
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:120 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
10 V
more info

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