RF Transistors - Page 200

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 3100 MHz, 9.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
9.4 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
27.5 to 28.8 dBm
Package Type:
Flanged
Power(W):
0.56 to 0.76 W
Package:
WF
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
200 V
Package:
TO-247 [L]
more info
Description:200 W GaN HEMT from 4.4 to 5 GHz
Application Industry:
SATCOM, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
4.4 to 5 GHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:1.805 to 1.995 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
50.7 dBm
Package Type:
Surface Mount
Power(W):
117.49 W
Supply Voltage:
28 V
Package:
SOT1271-2
more info
A2T23H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:3100 to 3400 MHz, 8.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
8.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IA
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-78029
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
29.29 dBm
Package Type:
Flanged
Power(W):
0.85 W
Gain:
9.3 dB
Supply Voltage:
11.5 V
Package:
Flange Ceramic
more info

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