RF Transistors - Page 200

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
14.3 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
30.5 to 31.8 dBm
Package Type:
Flanged
Power(W):
1.12 to 1.51 W
Package:
WF
more info
Description:20 Watts, 36 Volts, 200µs, 10% Radar 1480 to 1650 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.48 to 1.65 GHz
Power:
43.01 to 44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
36 V
Package:
55LV
more info
Description:120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
VHF to 2.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:54.77 dBm (300 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
SOT502F
more info
MMRF1304L Image
Description:Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info
Description:3100 to 3500 MHz, 9.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
9.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:GaN HEMT for L, S, C, X, and Ku-Band Amplifier Applications
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
45.1 dBm
Package Type:
Surface Mount
Power(W):
32.36 W
Supply Voltage:
40 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type