RF Transistors - Page 199

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.2 to 2.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
8 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:70 W, 2-Stage LDMOS Integrated Doherty MMIC from 1.8 to 2.2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
1800 to 2200 MHz
Power:
47.0 to 48.5 dBm
Package Type:
Surface Mount
Power(W):
50.11 to 70.7 W
Supply Voltage:
5 V
more info
MMRF1306HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
60.97 dBm
Package Type:
Flanged
Power(W):
1250.26 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
13 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
39.5 to 40 dBm
Package Type:
Flanged
Power(W):
8.91 to 10 W
Package:
MK
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Die
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
50 to 52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Supply Voltage:
50 V
more info
Description:2.4 to 2.5 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
AFT05MS006N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 6 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
6 W
Supply Voltage:
7.5 V
Package:
PLD--1.5W
more info

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