RF Transistors - Page 199

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-78029
more info
Description:30-W, DC to 6.0 GHz, GaN HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
53.52 to 61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT1248C
more info
A2T18H450W19S Image
Description:1.8GHZ 450W NI1230S-4S4S
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.49 dBm
Package Type:
Flanged
Power(W):
88.92 W
Supply Voltage:
32 Vdc
Package:
NI--1230S--4S4S
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Package Type:
Chip
Power(W):
0.22 to 0.28 W
more info
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 25 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
250 V
Package:
T2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
10 dB
Supply Voltage:
35 V
Package:
Flange Ceramic
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
MRF6V12500HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info

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