RF Transistors - Page 198

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:52.04 dBm (160 W), LDMOS Transistor from 10 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1.5 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1223-2
more info
MMRF1310H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
NI--780H--4L
more info
Description:5200 to 5900 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
12.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.65 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.65 GHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description:800 Watts - 54 Volts, 20us, 6% 1025-1150 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
59.03 to 59.16 dBm
Package Type:
Die
Power(W):
824.14 W
Supply Voltage:
54 V
Package:
55-KR
more info
Description:5.2 to 5.9 GHz GaN MMIC for Radar Power Amplifiers
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
45.68 dBm
Package Type:
Flanged
Power(W):
37 W
Supply Voltage:
28 V
more info
Description:1930 to 1995 MHz LDMOS Transistor for Base Station Applications
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1930 to 1695 MHz
Power:
57.78 dBm
Package Type:
4-Hole Flanged
Power(W):
600 W
Supply Voltage:
30 V
more info
AFV10700H Image
Description:700 W LDMOS RF Power Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Broadcast, Radar, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Supply Voltage:
52 V
Package:
NI--780H--4L
more info
Description:1030 MHz, 9.7 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
46.02 to 47.52 dBm
Package Type:
Flanged
Power(W):
56.49 W
Gain:
9.7 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Surface Mount
Gain:
11 to 13 dB
Supply Voltage:
2 V
Package:
LG
more info

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