RF Transistors - Page 202

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
T2
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
51.76 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:40.79 dBm (12 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.79 dBm
Package Type:
Surface Mount
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
SOT975C
more info
AFM907N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 136-941 MHz, 7 W, 7.5 V WIDEBAND
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
DFN 4 x 6
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Package Type:
Die
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:90-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
500 MHz to 2.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:1.805 to 1.99 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.99 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502B
more info
MMRF1011HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.98 to 45.98 dBm
Package Type:
Flanged
Power(W):
39.63 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info

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