RF Transistors - Page 202

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:750 Watts - 50 Volts, ELM L-Band Avionics 1030 - 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
58.75 to 59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
13 dB
Supply Voltage:
12.5 V
Package:
Flange Ceramic
more info
Description:10 W GaN Power Transistor from 2.3 to 5 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 5000 MHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
more info
AFV141KH Image
Description:BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:2700 to 2900 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.1 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Chip
Power(W):
0.2 to 0.25 W
more info
Description:280 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.47 dBm
Package Type:
Die
Power(W):
279.9 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:170-W, 6.0-GHz, 50-V GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
52.3 dBm
Package Type:
Die
Power(W):
169.82 W
Supply Voltage:
50 V
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1120B
more info
MRF8S9100HR3 Image
Description:GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.57 dBm
Package Type:
Flanged
Power(W):
71.94 W
Supply Voltage:
28 V
Package:
CASE 465A--06, STYLE 1 NI--780S
more info

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