RF Transistors - Page 203

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2856 MHz, 9.8 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
29.54 dBm
Package Type:
Flanged
Power(W):
0.9 W
Gain:
9.8 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.2 to 1.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.4 to 54.3 dBm
Package Type:
Flanged
Power(W):
218.78 to 269.15 W
Supply Voltage:
50 V
more info
Description:E-Series GaN Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
50 V
Package:
55-78030
more info
Description:240-W, 3100 to 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
52.55 to 53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
28 V
Package:
SOT539A
more info
MMRF1009H Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:1030 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 to 61.5 dBm
Package Type:
Flanged
Power(W):
1412.54 W
Gain:
9.2 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.5 GHz
Power:
39 to 40.5 dBm
Package Type:
Flanged
Power(W):
7.94 to 11.22 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:110 Watts, 40 Volts, 200µs, 10% Radar 1480 to 1650 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.48 to 1.65 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
40 V
Package:
55AW-1
more info
Description:8 W GaN MMIC for Power Amplifiers from 0.5 to 2.7 GHz
Application Industry:
ISM, Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
500 to 2700 MHz
Power:
38.2 to 39.59 dBm
Package Type:
Flanged
Power(W):
6.6 to 9.1 W
Supply Voltage:
50 V
Package:
6 leaded flange
more info

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