RF Transistors - Page 205

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
960 MHz to 1.215 GHz
Power:
23.01 dBm
Package Type:
Flanged
Power(W):
0.2 W
Gain:
10 dB
Supply Voltage:
18 V
Package:
Flange Ceramic
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
49.54 dBm
Package Type:
Surface Mount
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MMRF1015GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:2.856 GHz, Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
48.13 to 49.64 dBm
Package Type:
Flanged
Power(W):
92.04 W
Gain:
10.9 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
45 to 45.5 dBm
Package Type:
Flanged
Power(W):
31.62 to 35.48 W
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
41.3 dBm
Package Type:
Flanged
Power(W):
13.49 W
Gain:
7 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
AFT05MS003N Image
Description:Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
7.5V
Package:
SOT--89
more info
Description:1030 MHz, 11.1 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.44 to 56.94 dBm
Package Type:
Flanged
Power(W):
494.31 W
Gain:
11.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
41.5 to 42 dBm
Package Type:
Flanged
Power(W):
14.13 to 15.85 W
Supply Voltage:
10 V
more info

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