RF Transistors - Page 205

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
8.75 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:600 W LDMOS Power Transistor from 2110 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2170 MHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
110 W
Supply Voltage:
30 V
Package:
6 leaded flange
more info
MMRF1304GN Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:2700 to 3500 MHz, 10 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
10 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:2.9 W GaN HEMT Power Amplifier from 0.5 to 3 GHz
Application Industry:
ISM, Radar, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.5 to 3 GHz
Power:
33.01 to 34.62 dBm
Package Type:
Surface Mount
Power(W):
2 to 2.9 W
Supply Voltage:
28 V
Package:
Dual-Flat-No-Lead (DFN)
more info
Description:50 dBm (100 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MHT1004N Image
Description:RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.45 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:1030 to 1090 MHz, 17 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
41.76 to 45.31 dBm
Package Type:
Flanged
Power(W):
33.96 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.81 to 57.4 dBm
Package Type:
Flanged
Power(W):
480 to 550 W
Supply Voltage:
50 V
more info

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