RF Transistors - Page 204

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:56.99 dBm (500 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MRF8S9100HR3 Image
Description:GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.57 dBm
Package Type:
Flanged
Power(W):
71.94 W
Supply Voltage:
28 V
Package:
CASE 465A--06, STYLE 1 NI--780S
more info
Description:1200 to 1400 MHz, 13.2 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40 to 43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
13.2 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Chip
Power(W):
0 to 0.03 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
41.3 dBm
Package Type:
Flanged
Power(W):
13.49 W
Gain:
7 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
C5H3337N110D Image
Description:Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN
Frequency:
3.3 to 3.7 GHz
Power:
55.05 dBm
Package Type:
Surface Mount
Power(W):
320 W
Gain:
14 dB
Package:
QFN
more info
MMRF1005HS Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
53.62 to 53.62 dBm
Package Type:
Flanged
Power(W):
230.14 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:3100 to 3500 MHz, 10.4 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
10.4 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Surface Mount
Gain:
12 to 13.5 dB
Supply Voltage:
2 V
Package:
LP
more info

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