RF Transistors - Page 204

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.3 to 3.65 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.65 GHz
Power:
40 to 40.9 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
10 to 12.3 W
Supply Voltage:
28 V
more info
MRFE6VS25GN Image
Description:Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:2856 MHz, 9.8 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
29.54 dBm
Package Type:
Flanged
Power(W):
0.9 W
Gain:
9.8 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 12.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.5 GHz
Power:
29 to 30 dBm
Package Type:
Flanged
Power(W):
0.79 to 1 W
Package:
MH
more info
Description:200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Package Type:
Flanged
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure,...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
12 dB
Supply Voltage:
12.5 V
Package:
Flange Ceramic
more info
Description:54.91 dBm (310 W), LDMOS Transistor from 1900 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.9 to 2 GHz
Power:
54.92 dBm
Package Type:
Surface Mount
Power(W):
310.46 W
Supply Voltage:
28 V
Package:
SOT1258-3
more info
MMRF1306H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
60.97 dBm
Package Type:
Flanged
Power(W):
1250.26 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:2700 to 3500 MHz, 10 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
10 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IA
more info

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