RF Transistors - Page 208

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:700 W LDMOS Transistor for Avionics Applications
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
58.45 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
700 W
Gain:
20 dB
Supply Voltage:
50 V
more info
AFV121KH Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
IGN1012S2500 Image
Description:2.5 kW, L-Band GaN Transistor for Directed Energy Applications
Application Industry:
Military
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.2 GHz
Power:
63.98 dBm
Package Type:
2-Hole Flanged
Power(W):
2.5 kW
Gain:
17 dB
Supply Voltage:
100 V
more info
Description:GaN on SiC, GaN HEMT from 7.1 to 8.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.1 to 8.5 GHz
Power:
41.5 to 43 dBm (P5dB)
Package Type:
Surface Mount
Power(W):
14.13 to 19.95 W (P5dB)
Gain:
10 to 12 dB
Supply Voltage:
24 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
29.29 dBm
Package Type:
Flanged
Power(W):
0.85 W
Gain:
9.3 dB
Supply Voltage:
11.5 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
28 V
Package:
SOT1258-7
more info
A2T09D400-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
28 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.79 to 52.5 dBm
Package Type:
Flanged
Power(W):
177.83 W
Gain:
18.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
34.5 to 35.5 dBm
Package Type:
Flanged
Power(W):
2.82 to 3.55 W
Package:
ME
more info

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