RF Transistors - Page 207

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:80 W GaN-on-SiC HEMT from 7.9 to 8.4 GHz
Application Industry:
Broadcast, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
31.6 W
Gain:
14.6 to 17 dB
Package:
Flange Ceramic / Metal
more info
Description:915 to 930 MHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
915 to 930 MHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info
A2G22S160-01S Image
Description:AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.42 dBm
Package Type:
Flanged
Power(W):
219.79 W
Gain:
7.4 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT539B
more info
MRF24300N Image
Description:320 Watt RF Power LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
Broadcast, ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
54.15 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:1.025 to 1.150 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
158.49 W
Supply Voltage:
50 V
more info

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