RF Transistors - Page 207

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:29 W RF GaN on SiC HEMT from 3.3 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
53.01 dBm
Package Type:
Earless Flanged
Power(W):
200 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
50 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.3 to 3.65 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.65 GHz
Power:
40 to 40.9 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
10 to 12.3 W
Supply Voltage:
28 V
more info
MRFE6VP100HS Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780S--4
more info
Description:2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
11.5 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 11.4 to 12 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
11.4 to 12 GHz
Power:
49.5 to 51 dBm
Package Type:
Flanged
Power(W):
89.13 to 125.89 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Package Type:
Flanged
Gain:
13 dB
Supply Voltage:
15 V
Package:
Flange Ceramic
more info
Description:43.01 dBm (20 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
MMRF1006HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:1200 to 1400 MHz, 13.7 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
47.78 to 49.78 dBm
Package Type:
Flanged
Power(W):
95.06 W
Gain:
13.7 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 1.5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.5 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type