RF Transistors - Page 206

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:225 MHz to 2.6 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
225 MHz to 2.6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Gain:
12 dB
Supply Voltage:
28 V
more info
Description:2.5 to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1121A
more info
MMRF1308HSR5 Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
12.5 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
more info
Description:400 W Thermally Enhanced LDMOS FET from 2110 to 2180 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.18 GHz
Power:
52.04 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
160 to 400 W
Gain:
13.7 to 16 dB
Supply Voltage:
28 V
Package:
PG-HB2SOF-8-1
more info
Description:5 W GaN Power Transistor from 2.3 to 5 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 5000 MHz
Power:
37 dBm
Package Type:
Surface Mount
Power(W):
5 W
more info
A2T07H310-24S Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 47 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
46.72 dBm
Package Type:
Flanged
Power(W):
46.99 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:870 to 990 MHz, 10.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
900 MHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info

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