RF Transistors - Page 219

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
34 to 35 dBm
Package Type:
Flanged
Power(W):
2.51 to 3.16 W
more info
Description:2.7 to 2.9 GHz, Bipolar Transistor
Application Industry:
Radar, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.98 dBm
Package Type:
Flanged
Power(W):
314.77 W
Gain:
8.3 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.53 dBm
Package Type:
Surface Mount
Power(W):
449.78 W
Supply Voltage:
50 V
Package:
SOT634A
more info
A2T26H300-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 to 18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:60 Watt LDMOS Transistor from 10 to 1000 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
60 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
MRF8S9202GN Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2267--01 OM--780--2 GULL PLASTIC
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
9.4 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info

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