RF Transistors - Page 218

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:48.75 dBm (75 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
30 V
Package:
SOT1239B
more info
MW6S004N Image
Description:Lateral N-Channel RF Power MOSFET, 36526 MHz, 4 W, 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Package Type:
Surface Mount
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 466-03, STYLE 1 PLD 1.5 PLASTIC
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Chip
Gain:
10 to 20 dB
Supply Voltage:
2 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1 to 30 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:54.77 dBm (300 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
SOT502B
more info
MRF7S24250N Image
Description:RF POWER LDMOS TRANSISTOR, 2450 MHz, 250 W, 32 V
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:GaN on SiC, GaN HEMT from 9 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
55.3 dBm
Package Type:
Flanged
Power(W):
339 W
Gain:
9.3 dB
Supply Voltage:
50 V
more info
Description:280 W GaN on SiC HEMT from 3.3 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3600 MHz
Power:
54.47 dBm
Package Type:
Earless Flanged
Power(W):
280 W
Gain:
15 dB
Supply Voltage:
55 V
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 900 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 to 900 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MMRF5014H Image
Description:WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 292196 MHz, 125 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2.7 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
NI--360H--2SB
more info

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