RF Transistors - Page 218

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF8S9260HR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
CASE 465B--04 NI--880
more info
Description:GaAs FET from 10 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10 GHz
Power:
33.5 dBm
Package Type:
Die
Power(W):
2.24 W
more info
Description:10 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
42.3 dBm
Package Type:
Flanged
Power(W):
17 W
Supply Voltage:
28 V
more info
Description:A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
53.71 to 53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
MRF6VP3450HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:GaAs FET from 12 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.039 W
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.43 dBm
Package Type:
Flanged
Power(W):
174.98 W
Gain:
8.3 dB
Supply Voltage:
45 V
Package:
Flange Ceramic
more info
BLF6G22LS-40P Image
Description:46.02 dBm (40 W), LDMOS Transistor from 2110 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1121B
more info
AFT09S282N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
OM--780--2 PLASTIC
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IK
more info

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