RF Transistors - Page 223

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
7 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
Package:
SOT1228A
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
41.5 to 42 dBm
Package Type:
Flanged
Power(W):
14.13 to 15.85 W
Supply Voltage:
10 V
more info
Description:500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.75 to 57.99 dBm
Package Type:
Flanged
Power(W):
629.51 W
Supply Voltage:
50 V
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
Package:
IA
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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