RF Transistors - Page 223

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:75 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
48.75 dBm
Package Type:
Die
Power(W):
74.99 W
Supply Voltage:
50 V
more info
Description:30 W LDMOS Power Transistor 616 to 960 MHz for Base Stations
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
616 to 960 MHz
Power:
44.77 dbm
Package Type:
Flanged
Power(W):
30 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
25.5 to 27 dBm
Package Type:
Flanged
Power(W):
0.35 to 0.5 W
Package:
WG
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:60 Watt, 2-Stage LDMOS Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
32 V
Package:
SOT1211-2
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
8 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.88 to 2.025 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.88 to 2.025 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info
Description:GaAs FET from 2.5 to 2.7 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.5 to 2.7 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
7 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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