RF Transistors - Page 222

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 MHz to 1 GHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:370 W GaN on SiC HEMT from 2495 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
55.68 dBm
Package Type:
Earless Flanged
Power(W):
370 W
Gain:
12.5 to 15 dB
Supply Voltage:
48 V
Package:
H-37248C-4
more info
BLC9G20XS-160AV Image
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy, Wireless Infra...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:GaN on SiC, GaN HEMT from 6.4 to 7.2 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
6.4 to 7.2 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
24 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
150 to 400 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
12 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT1251-3
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IK
more info
Description:8 W GaN MMIC for Power Amplifiers from 0.5 to 2.7 GHz
Application Industry:
ISM, Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
500 to 2700 MHz
Power:
38.2 to 39.59 dBm
Package Type:
Flanged
Power(W):
6.6 to 9.1 W
Supply Voltage:
50 V
Package:
6 leaded flange
more info
Description:43.01 dBm (20 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
Package:
M2A
more info

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