RF Transistors - Page 222

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF6V13250H Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
38 to 39 dBm
Package Type:
Surface Mount
Power(W):
6.31 to 7.94 W
Supply Voltage:
10 V
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:51.76 dBm (150 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.6 to 2.7 GHz
Power:
51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
SOT1244B
more info
Description:120 W GaN HEMT from DC to 8 GHz
Application Industry:
Broadcast, Test & Measurement, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
50.8 dBm
Package Type:
Die
Power(W):
120.23 W
Supply Voltage:
28 V
more info
Description:A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
53.52 to 61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539B
more info
Description:GaAs FET from 12.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.5 GHz
Power:
29 to 30 dBm
Package Type:
Flanged
Power(W):
0.79 to 1 W
Package:
MH
more info
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.7 to 4.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.7 to 4.1 GHz
Power:
47 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
50.12 W
Supply Voltage:
28 V
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Package Type:
Surface Mount
Power(W):
8.91 W
Supply Voltage:
50 V
more info

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