RF Transistors - Page 215

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
35 to 36 dBm
Package Type:
Surface Mount
Power(W):
3.16 to 3.98 W
Supply Voltage:
10 V
Package:
IK
more info
Description:920 to 960 MHz Thermally-Enhanced High Power RF LDMOS FET
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
920 to 960 MHz
Power:
58 dBm
Package Type:
Earless Flanged
Power(W):
630 W
Gain:
19 dB
Supply Voltage:
48 V
more info
Description:1.805 to 2 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF8VP13350GN Image
Description:RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Supply Voltage:
50 V
Package:
OM--780G--4L PLASTIC
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
53.7 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 150 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:3.4 to 3.6 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.4 to 3.6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975B
more info
AFT09S220-02N Image
Description:HV9 900MHz 30W OM780-2L
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
850 to 960 MHz
Power:
47.32 dBm
Package Type:
Flanged
Power(W):
53.95 W
Supply Voltage:
28 Vdc
Package:
OM--780--2L PLASTIC
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.3 to 3.6 GHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
50 V
more info

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