RF Transistors - Page 217

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 6.4 to 7.2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IB
more info
Description:30-W, DC to 6.0 GHz, GaN HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Supply Voltage:
50 V
Package:
SOT467C
more info
AFT23S160W02GS Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-780GS-2L
more info
Description:GaN from 9.8 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.8 to 10.5 GHz
Power:
53.42 to 53.98 dBm
Package Type:
Surface Mount
Power(W):
220 to 250 W
Gain:
7.4 to 8 dB
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40 dBm (10 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
40.4 dBm
Package Type:
Surface Mount
Power(W):
10.96 W
Supply Voltage:
28 V
Package:
SOT1179-2
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
28.5 to 29.5 dBm
Package Type:
Surface Mount
Power(W):
0.71 to 0.89 W
Package:
XM
more info
Description:3.1 to 3.5 GHz GaN HEMT for S-Band Radar Power Amplifiers
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
13 dB
Supply Voltage:
50 V
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502A
more info

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