RF Transistors - Page 216

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:10 to 600 MHz, Power LDMOS transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1204-2
more info
A2I20H060N Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
27.5 to 28.8 dBm
Package Type:
Flanged
Power(W):
0.56 to 0.76 W
Package:
WF
more info
Description:2.7 to 2.9 GHz, Bipolar Transistor
Application Industry:
Radar, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.98 dBm
Package Type:
Flanged
Power(W):
314.77 W
Gain:
8.3 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT539A
more info
A2T27S020GN Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 MHz to 2.7 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
28.5 to 29.5 dBm
Package Type:
Surface Mount
Power(W):
0.71 to 0.89 W
Supply Voltage:
10 V
Package:
ZM
more info
Description:400 W GaN on SiC HEMT from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
56.02 dBm
Package Type:
Earless Flanged
Power(W):
400 W
Gain:
13 dB
Supply Voltage:
48 V
more info
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
58.45 to 58.75 dBm
Package Type:
Surface Mount
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
MRF6V2150N Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info

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