RF Transistors - Page 216

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.7 GHz
Power:
48.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
69.18 W
Supply Voltage:
28 V
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Package Type:
Chip
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info
Description:GaAs FET from 12 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.039 W
more info
Description:120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
VHF to 2.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:61.46 dBm (1400 W), LDMOS Transistor from 10 to 500 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MRF1570NT1 Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
CASE 1366-05, STYLE 1 TO-272-8 WRAP PLASTIC
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Radar, Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
more info
Description:250 Watts GaN on SiC HEMT from DC to 2 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Aeros...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
53.38 to 54.31 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
15.4 to 16.5 dB
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1400 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.4 to 1.5 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MMRF1020-04GN Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info

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