RF Transistors - Page 220

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF6V12500H Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:GaN on SiC, GaN HEMT from 1.7 to 2.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.7 to 2.5 GHz
Power:
51 to 51.9 dBm
Package Type:
Flanged
Power(W):
125.89 to 154.88 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
MMRF1011H Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
45.98 to 45.98 dBm
Package Type:
Flanged
Power(W):
39.63 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:500 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
1800 to 2000 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
more info
MRF6VP21KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-235 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 235 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
26 to 27 dBm
Package Type:
Flanged
Power(W):
0.4 to 0.5 W
Package:
WG
more info

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