RF Transistors - Page 220

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121E
more info
AFT09MS031GN Image
Description:Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10.5 GHz
Power:
51.5 to 53.5 dBm
Package Type:
Flanged
Power(W):
141.25 to 223.87 W
Gain:
7.5 to 9.5 dB
Supply Voltage:
50 V
more info
Description:1000 W LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1030 MHz / 1090 MHz
Power:
59.64 to 60.04 dBm (P1dB), 60.21 to 60.53 dBm (P3d...
Package Type:
Flanged
Power(W):
920 to 1010 W (P1dB), 1050 to 1130 W (P3dB)
Gain:
17 to 21 dB
Supply Voltage:
50 V
Package:
H-36275-4
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.7 GHz
Power:
44 to 44.8 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
25.12 to 30.2 W
Supply Voltage:
28 V
more info
MRF6V12500GS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780GS--2L
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:DC to 2 GHz GaN Transistor in a Plastic Package
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
48 V
Package:
TO272
more info
Description:50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502B
more info
A2T07D160W04S Image
Description:Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L
more info

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